MPS918G
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- Mfr.Part #
- MPS918G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 15V 0.05A TO92
- Stock
- 38,600
- In Stock ：
- 38,600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 600MHz
- Collector Emitter Breakdown Voltage :
- 15V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Through Hole
- Power Dissipation :
- 350mW
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 8mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 1mA, 10mA
- Collector Emitter Saturation Voltage :
- 400mV
- Gain Bandwidth Product :
- 600MHz
- Current Rating :
- 50mA
- Emitter Base Voltage (VEBO) :
- 3V
- Max Collector Current :
- 50mA
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Lifecycle Status :
- OBSOLETE (Last Updated: 2 days ago)
- Collector Emitter Voltage (VCEO) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 20
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Elements :
- 1
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Through Hole
- Transition Frequency :
- 600MHz
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 350mW
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Voltage - Rated DC :
- 15V
- Pin Count :
- 3
- Published :
- 2006
- Transistor Type :
- NPN
- Datasheets
- MPS918G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS918G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20 @ 8mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 1mA, 10mA.The emitter base voltage can be kept at 3V for high efficiency.The current rating of this fuse is 50mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 600MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
MPS918G Features
the DC current gain for this device is 20 @ 8mA 10V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 1mA, 10mA
the emitter base voltage is kept at 3V
the current rating of this device is 50mA
a transition frequency of 600MHz
MPS918G Applications
There are a lot of ON Semiconductor
MPS918G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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