MPS751ZL1G
- Mfr.Part #
- MPS751ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 2A TO92
- Stock
- 14,976
- In Stock :
- 14,976
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -60V
- Frequency :
- 75MHz
- Published :
- 2007
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Current Rating :
- -2A
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- ECCN Code :
- EAR99
- hFE Min :
- 75
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 1A 2V
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Type :
- PNP
- Transition Frequency :
- 75MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Base Part Number :
- MPS751
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 75MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Max Collector Current :
- 2A
- Datasheets
- MPS751ZL1G

PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS751ZL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 75 @ 1A 2V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 75MHz.A maximum collector current of 2A volts can be achieved.
MPS751ZL1G Features
the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 75MHz
MPS751ZL1G Applications
There are a lot of ON Semiconductor
MPS751ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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