MPS4126RLRA
- Mfr.Part #
- MPS4126RLRA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 0.2A TO92
- Stock
- 1,285
- In Stock :
- 1,285
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Base Part Number :
- MPS4126
- Collector Base Voltage (VCBO) :
- -25V
- Transition Frequency :
- 170MHz
- Mount :
- Through Hole
- HTS Code :
- 8541.21.00.75
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 400mV
- Pbfree Code :
- No
- Reach Compliance Code :
- not_compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Saturation Voltage :
- -400mV
- JESD-609 Code :
- e0
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -200mA
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 1V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 240
- Power - Max :
- 625mW
- Max Collector Current :
- 200mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Number of Terminations :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 4V
- Published :
- 2007
- Voltage - Rated DC :
- -25V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Breakdown Voltage :
- 25V
- hFE Min :
- 120
- Pin Count :
- 3
- Gain Bandwidth Product :
- 170MHz
- Datasheets
- MPS4126RLRA

PNP -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS4126RLRA Overview
In this device, the DC current gain is 120 @ 2mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 5mA, 50mA.Keeping the emitter base voltage at 4V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-200mA).170MHz is present in the transition frequency.An input voltage of 25V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
MPS4126RLRA Features
the DC current gain for this device is 120 @ 2mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at 4V
the current rating of this device is -200mA
a transition frequency of 170MHz
MPS4126RLRA Applications
There are a lot of ON Semiconductor
MPS4126RLRA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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