MNS2N2222AUBP/TR
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- Mfr.Part #
- MNS2N2222AUBP/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 43,493
- In Stock ：
- 43,493
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Status :
- Active
- Supplier Device Package :
- UB
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Product Type :
- BJTs - Bipolar Transistors
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Current - Collector (Ic) (Max) :
- 800 mA
- Subcategory :
- Transistors
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA
- Package :
- Bulk
- Product Category :
- Bipolar Transistors - BJT
- Series :
- Military, MIL-PRF-19500/255
- Package / Case :
- 3-SMD, No Lead
- Power - Max :
- 500 mW
- Manufacturer :
- Microchip
- Datasheets
- MNS2N2222AUBP/TR
NPN -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
MNS2N2222AUBP/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Product comes in the supplier's device package UB.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
MNS2N2222AUBP/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
MNS2N2222AUBP/TR Applications
There are a lot of Microchip Technology
MNS2N2222AUBP/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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