MNS2N2222AUBP/TR
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- Mfr.Part #
- MNS2N2222AUBP/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 43,493
- In Stock ：
- 43,493
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Product Category :
- Bipolar Transistors - BJT
- Subcategory :
- Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Series :
- Military, MIL-PRF-19500/255
- Package :
- Bulk
- Transistor Type :
- NPN
- Product Status :
- Active
- Mounting Type :
- Surface Mount
- Power - Max :
- 500 mW
- Supplier Device Package :
- UB
- Frequency - Transition :
- -
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Brand :
- Microchip Technology
- Manufacturer :
- Microchip
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Current - Collector Cutoff (Max) :
- 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Product Type :
- BJTs - Bipolar Transistors
- Package / Case :
- 3-SMD, No Lead
- Current - Collector (Ic) (Max) :
- 800 mA
- Datasheets
- MNS2N2222AUBP/TR
NPN -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
MNS2N2222AUBP/TR Overview
In this device, the DC current gain is 100 @ 150mA, 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.Product comes in the supplier's device package UB.There is a 50 V maximal voltage in the device due to collector-emitter breakdown.
MNS2N2222AUBP/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
MNS2N2222AUBP/TR Applications
There are a lot of Microchip Technology
MNS2N2222AUBP/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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