MNS2N2222AUB/TR
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- Mfr.Part #
- MNS2N2222AUB/TR
- Manufacturer
- Microchip Technology
- Package / Case
- 3-SMD, No Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.8A UB
- Stock
- 27,863
- In Stock ：
- 27,863
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Subcategory :
- Transistors
- Package :
- Bulk
- Mounting Type :
- Surface Mount
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Series :
- Military, MIL-PRF-19500/255
- Product Type :
- BJTs - Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA, 10V
- Brand :
- Microchip Technology
- Frequency - Transition :
- -
- Product Status :
- Active
- Product Category :
- Bipolar Transistors - BJT
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA
- Current - Collector (Ic) (Max) :
- 800 mA
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Supplier Device Package :
- UB
- Manufacturer :
- Microchip
- Power - Max :
- 500 mW
- Package / Case :
- 3-SMD, No Lead
- Datasheets
- MNS2N2222AUB/TR
NPN -65°C ~ 200°C (TJ) 50nA 3-SMD, No Lead Surface Mount
MNS2N2222AUB/TR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 150mA, 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 50mA, 500mA.This product comes in a UB device package from the supplier.Device displays Collector Emitter Breakdown (50 V maximal voltage).
MNS2N2222AUB/TR Features
the DC current gain for this device is 100 @ 150mA, 10V
the vce saturation(Max) is 1V @ 50mA, 500mA
the supplier device package of UB
MNS2N2222AUB/TR Applications
There are a lot of Microchip Technology
MNS2N2222AUB/TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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