MMSS8550-H-TP
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- Mfr.Part #
- MMSS8550-H-TP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A SOT23
- Stock
- 11,000
- In Stock ：
- 11,000
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Configuration :
- Single
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Current - Collector (Ic) (Max) :
- 1.5A
- Current - Collector Cutoff (Max) :
- 100nA
- Base Part Number :
- MMSS8550
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Surface Mount :
- yes
- Pin Count :
- 3
- Terminal Position :
- Dual
- JESD-30 Code :
- R-PDSO-G3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max (Abs) :
- 0.625W
- Packaging :
- Tape and Reel (TR)
- Published :
- 2005
- JESD-609 Code :
- e3
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 625mW
- Transistor Type :
- PNP
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 25V
- Qualification Status :
- Not Qualified
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Datasheets
- MMSS8550-H-TP
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMSS8550-H-TP Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Parts of this part have transition frequencies of 100MHz.This device displays a 25V maximum voltage - Collector Emitter Breakdown.
MMSS8550-H-TP Features
the DC current gain for this device is 120 @ 100mA 1V
the vce saturation(Max) is 500mV @ 80mA, 800mA
a transition frequency of 100MHz
MMSS8550-H-TP Applications
There are a lot of Micro Commercial Co
MMSS8550-H-TP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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