MMSF7P03HDR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

50A

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.3A, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.68pF @ 24V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

7A

DS Breakdown Voltage-Min :

30V

Avalanche Energy Rating (Eas) :

5000 mJ

Drain-source On Resistance-Max :

0.035Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Pin Count :

8

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

1V @ 250μA

Qualification Status :

COMMERCIAL

Pbfree Code :

No

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

75.8nC @ 6V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V