MMSF3P02HDR2G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Published :

2006

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

5.6A

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

5mm

Turn On Delay Time :

25 ns

Width :

4mm

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Nominal Vgs :

1.5 V

Current - Continuous Drain (Id) @ 25°C :

5.6A Ta

Avalanche Energy Rating (Eas) :

567 mJ

Terminal Position :

Dual

Fall Time (Typ) :

97 ns

FET Type :

P-Channel

Terminal Form :

Gull wing

Turn-Off Delay Time :

110 ns

Factory Lead Time :

27 Weeks

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

30A

Current Rating :

-3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Power Dissipation-Max :

2.5W Ta

Resistance :

75mOhm

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Rise Time :

40ns

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 16V

Number of Pins :

8

JESD-609 Code :

e3

Lead Free :

Lead Free

Pin Count :

8

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Pbfree Code :

yes

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

75m Ω @ 3A, 10V

Element Configuration :

Single

Voltage - Rated DC :

-20V

Mounting Type :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Height :

1.5mm