MMFT960T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 10V

Package / Case :

TO-261-4, TO-261AA

Power Dissipation-Max :

800mW Ta

Number of Elements :

1

Height :

1.65mm

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

65pF @ 25V

Resistance :

1.7Ohm

Nominal Vgs :

1 V

Current Rating :

300mA

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.7 Ω @ 1A, 10V

Terminal Finish :

Tin (Sn)

Width :

3.7mm

Pin Count :

4

Published :

2006

JESD-609 Code :

e3

Length :

6.7mm

Current - Continuous Drain (Id) @ 25°C :

300mA Tc

Radiation Hardening :

No

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Lead Free :

Lead Free

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

3.5V @ 1mA

Power Dissipation :

800mW

Voltage - Rated DC :

60V

Pbfree Code :

yes

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

0.3A

Continuous Drain Current (ID) :

300mA

Operating Temperature :

-65°C~150°C TJ

Terminal Form :

Gull wing

REACH SVHC :

No SVHC

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Case Connection :

DRAIN

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

FET Type :

N-Channel

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)