MMFT1N10ET3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PDSO-G4

Terminal Form :

Gull wing

Operating Temperature (Max) :

150°C

Number of Elements :

1

Number of Terminals :

4

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

Dual

Surface Mount :

yes

HTS Code :

8541.21.00.95

ECCN Code :

EAR99

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

1A

Power Dissipation Ambient-Max :

0.8W

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-261AA

Polarity/Channel Type :

N-Channel

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.25Ohm