MJW3281AG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

hFE Min :

50

Transition Frequency :

30MHz

Vce Saturation (Max) @ Ib, Ic :

2V @ 1A, 10A

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

230V

Time@Peak Reflow Temperature-Max (s) :

40

Surface Mount :

No

Power Dissipation :

200W

Transistor Application :

AMPLIFIER

Max Collector Current :

15A

Packaging :

Tube

Transistor Type :

NPN

Current Rating :

15A

Terminal Position :

Single

Number of Pins :

3

Package / Case :

TO-247-3

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

230V

Frequency :

30MHz

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

200W

Pbfree Code :

yes

Configuration :

Single

JEDEC-95 Code :

TO-247AD

ECCN Code :

EAR99

Voltage - Rated DC :

230V

Operating Temperature :

-65°C~150°C TJ

Gain Bandwidth Product :

30MHz

Published :

2000

Lead Free :

Lead Free

Number of Elements :

1

Collector Emitter Saturation Voltage :

400mV

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

50μA ICBO

Collector Emitter Voltage (VCEO) :

230V

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

6 Weeks

Contact Plating :

Tin

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 7A 5V

Pin Count :

3

Number of Terminations :

3

JESD-609 Code :

e3