MJL1302AG
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- Mfr.Part #
- MJL1302AG
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 260V 15A TO264
- Stock
- 9,941
- In Stock ：
- 9,941
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 1A, 10A
- Number of Elements :
- 1
- Frequency :
- 30MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Pin Count :
- 3
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 60
- Packaging :
- Tube
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Weight :
- 18.143695g
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current Rating :
- -15A
- Power Dissipation :
- 200W
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 75 @ 5A 5V
- Terminal Finish :
- Tin (Sn)
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 230V
- Collector Emitter Voltage (VCEO) :
- 200V
- Case Connection :
- Isolated
- Current - Collector Cutoff (Max) :
- 50μA ICBO
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Surface Mount :
- No
- Height :
- 29mm
- Collector Emitter Saturation Voltage :
- 3V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2005
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 8 Weeks
- Voltage - Rated DC :
- -200V
- Package / Case :
- TO-264-3, TO-264AA
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 30MHz
- Max Power Dissipation :
- 200W
- Collector Emitter Breakdown Voltage :
- 260V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 5.3mm
- Length :
- 20.3mm
- Transition Frequency :
- 30MHz
- Number of Terminations :
- 3
- Max Collector Current :
- 15A
- Lead Free :
- Lead Free
- Datasheets
- MJL1302AG
PNP -65°C~150°C TJ 50μA ICBO 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
MJL1302AG Overview
In this device, the DC current gain is 75 @ 5A 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 3V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 1A, 10A.With the emitter base voltage set at 7V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -15A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 15A volts at Single BJT transistors maximum.
MJL1302AG Features
the DC current gain for this device is 75 @ 5A 5V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 1A, 10A
the emitter base voltage is kept at 7V
the current rating of this device is -15A
a transition frequency of 30MHz
MJL1302AG Applications
There are a lot of ON Semiconductor
MJL1302AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJL1302A | onsemi | 20,013 | TRANS PNP 260V 15A TO264 |
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