MJE182

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

7.8mm

Voltage - Rated DC :

100V

Number of Elements :

1

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

80V

Collector Emitter Saturation Voltage :

1.7V

Gain Bandwidth Product :

50MHz

Max Collector Current :

3A

Pbfree Code :

yes

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

50MHz

Operating Temperature :

150°C TJ

Element Configuration :

Single

Height :

11.05mm

Radiation Hardening :

No

Mounting Type :

Through Hole

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Finish :

Matte Tin (Sn)

Collector-Base Capacitance-Max :

40pF

Emitter Base Voltage (VEBO) :

7V

Mount :

Through Hole

hFE Min :

50

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 100mA 1V

Polarity/Channel Type :

NPN

Max Power Dissipation :

12.5W

Packaging :

Tube

Power Dissipation :

12.5W

Number of Terminations :

3

Weight :

4.535924g

Vce Saturation (Max) @ Ib, Ic :

1.7V @ 600mA, 3A

Collector Emitter Breakdown Voltage :

80V

Width :

2.9mm

Collector Base Voltage (VCBO) :

100V

Base Part Number :

MJE182

RoHS Status :

ROHS3 Compliant

Pin Count :

3

REACH SVHC :

No SVHC

Transition Frequency :

50MHz

Transistor Element Material :

SILICON

Case Connection :

Isolated

Transistor Application :

SWITCHING

Current Rating :

3A

ECCN Code :

EAR99

Number of Pins :

3

Package / Case :

TO-225AA, TO-126-3