MJE15035

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Mfr.Part #
MJE15035
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 350V 4A TO220
Stock
9,235
In Stock :
9,235

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transition Frequency :
30MHz
Current - Collector Cutoff (Max) :
10μA ICBO
Gain Bandwidth Product :
30MHz
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
JESD-609 Code :
e3
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tube
Case Connection :
COLLECTOR
Height :
9.28mm
Current Rating :
-4A
Power Dissipation :
2W
Polarity/Channel Type :
PNP
Collector Emitter Breakdown Voltage :
350V
Published :
2003
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Length :
10.28mm
Vce Saturation (Max) @ Ib, Ic :
500mV @ 100mA, 1A
Operating Temperature :
-65°C~150°C TJ
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Contact Plating :
Tin
Transistor Element Material :
SILICON
Factory Lead Time :
5 Weeks
Width :
4.82mm
Package / Case :
TO-220-3
Collector Emitter Voltage (VCEO) :
350V
Mounting Type :
Through Hole
Number of Elements :
1
Peak Reflow Temperature (Cel) :
260
Number of Terminations :
3
REACH SVHC :
No SVHC
Collector Base Voltage (VCBO) :
350V
Max Collector Current :
4A
Collector Emitter Saturation Voltage :
500mV
Max Power Dissipation :
50W
Voltage - Rated DC :
-350V
Number of Pins :
3
Transistor Application :
AMPLIFIER
Lead Free :
Lead Free
ECCN Code :
EAR99
Frequency :
30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
10 @ 2A 5V
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
5V
Weight :
4.535924g
Radiation Hardening :
No
hFE Min :
100
Introducing Transistors - Bipolar (BJT) - Single onsemi MJE15035 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Number of Pins:3, MJE15035 pinout, MJE15035 datasheet PDF, MJE15035 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJE15035 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJE15035


PNP -65°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

MJE15035G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 2A 5V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 30MHz.A maximum collector current of 4A volts can be achieved.

MJE15035G Features


the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 30MHz


MJE15035G Applications


There are a lot of ON Semiconductor
MJE15035G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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