MJD6039T4

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Mfr.Part #
MJD6039T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN DARL 80V 4A DPAK
Stock
1,740
In Stock :
1,740

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
4A
Element Configuration :
Single
Terminal Form :
Gull wing
Collector Base Voltage (VCBO) :
80V
Published :
2006
Operating Temperature :
-65°C~150°C TJ
Current Rating :
4A
Base Part Number :
MJD6039
Collector Emitter Voltage (VCEO) :
80V
JESD-30 Code :
R-PSSO-G2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
80V
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
2.5V
Voltage - Rated DC :
80V
Surface Mount :
yes
Current - Collector Cutoff (Max) :
10μA
Case Connection :
COLLECTOR
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
500 @ 2A 4V
Collector Emitter Breakdown Voltage :
80V
Pin Count :
3
Transistor Element Material :
SILICON
Max Collector Current :
4A
JESD-609 Code :
e3
Contact Plating :
Tin
Halogen Free :
Halogen Free
Radiation Hardening :
No
Max Power Dissipation :
1.75W
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Polarity :
NPN
Transistor Application :
SWITCHING
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
Packaging :
Tape and Reel (TR)
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
Lead Free :
Lead Free
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
ECCN Code :
EAR99
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Factory Lead Time :
8 Weeks
Power Dissipation :
20W
Number of Terminations :
2
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Datasheets
MJD6039T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD6039T4 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:MJD6039, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Number of Terminations:2, MJD6039T4 pinout, MJD6039T4 datasheet PDF, MJD6039T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD6039T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD6039T4


NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD6039T4G Overview


In this device, the DC current gain is 500 @ 2A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.

MJD6039T4G Features


the DC current gain for this device is 500 @ 2A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A


MJD6039T4G Applications


There are a lot of ON Semiconductor
MJD6039T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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