MJD6039T4
- Mfr.Part #
- MJD6039T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 4A DPAK
- Stock
- 1,740
- In Stock :
- 1,740
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 4A
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 2006
- Operating Temperature :
- -65°C~150°C TJ
- Current Rating :
- 4A
- Base Part Number :
- MJD6039
- Collector Emitter Voltage (VCEO) :
- 80V
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 2.5V
- Voltage - Rated DC :
- 80V
- Surface Mount :
- yes
- Current - Collector Cutoff (Max) :
- 10μA
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 2A 4V
- Collector Emitter Breakdown Voltage :
- 80V
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 4A
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Halogen Free :
- Halogen Free
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1.75W
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Polarity :
- NPN
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Factory Lead Time :
- 8 Weeks
- Power Dissipation :
- 20W
- Number of Terminations :
- 2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- MJD6039T4

NPN - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD6039T4G Overview
In this device, the DC current gain is 500 @ 2A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 4A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 4A for this device.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
MJD6039T4G Features
the DC current gain for this device is 500 @ 2A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
MJD6039T4G Applications
There are a lot of ON Semiconductor
MJD6039T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| MJD6039T4G | onsemi | 15,904 | TRANS NPN DARL 80V 4A DPAK |
















