MJD350T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Power Dissipation :

1.56W

Collector Emitter Voltage (VCEO) :

300V

Pin Count :

3

Element Configuration :

Single

Polarity/Channel Type :

PNP

Number of Elements :

1

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

MJD350

Emitter Base Voltage (VEBO) :

3V

Lead Free :

Lead Free

Current Rating :

-500mA

Transistor Type :

PNP

Contact Plating :

Tin

REACH SVHC :

No SVHC

hFE Min :

30

Max Power Dissipation :

1.56W

Collector Base Voltage (VCBO) :

300V

Transistor Element Material :

SILICON

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2005

Case Connection :

COLLECTOR

Transition Frequency :

10MHz

ECCN Code :

EAR99

Weight :

4.535924g

Height :

2.38mm

Pbfree Code :

yes

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 50mA 10V

Number of Pins :

3

Max Breakdown Voltage :

300V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-300V

Transistor Application :

SWITCHING

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Width :

6.22mm

Lifecycle Status :

ACTIVE (Last Updated: 7 hours ago)

Number of Terminations :

2

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Max Collector Current :

500mA

Current - Collector Cutoff (Max) :

100μA

Collector Emitter Saturation Voltage :

1V

Collector Emitter Breakdown Voltage :

300V

Length :

6.73mm