MJD32C

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Pin Count :

3

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Number of Elements :

1

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Length :

6.7056mm

Published :

2001

Voltage - Rated DC :

-100V

Power Dissipation :

1.56W

JESD-609 Code :

e3

Lead Free :

Lead Free

Current Rating :

-3A

Width :

6.223mm

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

50μA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

1.2V

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MJD32

Emitter Base Voltage (VEBO) :

5V

Height :

2.3876mm

Gain Bandwidth Product :

3MHz

Transistor Application :

AMPLIFIER

Max Power Dissipation :

1.56W

Collector Base Voltage (VCBO) :

100V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Type :

PNP

Frequency :

3MHz

Pbfree Code :

yes

Number of Pins :

3

Mounting Type :

Surface Mount

Case Connection :

COLLECTOR

hFE Min :

25

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Max Collector Current :

3A

Transition Frequency :

3MHz

Collector Emitter Breakdown Voltage :

100V

Weight :

4.535924g

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100V

Operating Temperature :

-65°C~150°C TJ