MJD31T4

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

3MHz

Current Rating :

3A

Base Part Number :

MJD31

Max Power Dissipation :

1.56W

Number of Elements :

1

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Voltage - Rated DC :

40V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Terminal Form :

Gull wing

Number of Terminations :

2

Transition Frequency :

3MHz

Pin Count :

3

Collector Emitter Voltage (VCEO) :

40V

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Type :

NPN

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

AMPLIFIER

Case Connection :

COLLECTOR

Collector Emitter Saturation Voltage :

1.2V

Peak Reflow Temperature (Cel) :

260

Published :

2005

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

1.2V @ 375mA, 3A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

50μA

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Gain Bandwidth Product :

3MHz

Power Dissipation :

1.56W

Operating Temperature :

-65°C~150°C TJ

Length :

6.73mm

Width :

6.22mm

Collector Base Voltage (VCBO) :

40V

Collector Emitter Breakdown Voltage :

40V

Transistor Element Material :

SILICON

Height :

2.38mm

Number of Pins :

3

Pbfree Code :

yes

Max Collector Current :

3A

hFE Min :

25

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 3A 4V

Contact Plating :

Tin

JESD-609 Code :

e3

Max Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)