MJB5742T4G
- Mfr.Part #
- MJB5742T4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 400V 8A D2PAK
- Stock
- 3,835
- In Stock :
- 3,835
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Height :
- 4.83mm
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Base Part Number :
- MJB5742
- Transistor Type :
- NPN - Darlington
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Emitter Base Voltage (VEBO) :
- 8V
- Element Configuration :
- Single
- Polarity :
- NPN
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 9.65mm
- Max Collector Current :
- 8A
- Lead Free :
- Lead Free
- Weight :
- 2.000002g
- Collector Emitter Breakdown Voltage :
- 400V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 4A 5V
- Length :
- 10.29mm
- Collector Emitter Saturation Voltage :
- 2V
- Published :
- 2008
- Operating Temperature :
- -65°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Continuous Collector Current :
- 8A
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 400mA, 8A
- Power - Max :
- 100W
- Surface Mount :
- yes
- Number of Terminations :
- 2
- Max Breakdown Voltage :
- 400V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Datasheets
- MJB5742T4G

NPN - Darlington -65°C~150°C TJ 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
MJB5742T4G Overview
In this device, the DC current gain is 200 @ 4A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 400mA, 8A.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 8V allows for a high level of efficiency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
MJB5742T4G Features
the DC current gain for this device is 200 @ 4A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V
MJB5742T4G Applications
There are a lot of ON Semiconductor
MJB5742T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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