MJB5742T4G

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Mfr.Part #
MJB5742T4G
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN DARL 400V 8A D2PAK
Stock
3,835
In Stock :
3,835

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Form :
Gull wing
Height :
4.83mm
Max Power Dissipation :
2W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Base Part Number :
MJB5742
Transistor Type :
NPN - Darlington
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
2 Weeks
JESD-609 Code :
e3
Halogen Free :
Halogen Free
Emitter Base Voltage (VEBO) :
8V
Element Configuration :
Single
Polarity :
NPN
Pin Count :
3
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
JESD-30 Code :
R-PSSO-G2
Width :
9.65mm
Max Collector Current :
8A
Lead Free :
Lead Free
Weight :
2.000002g
Collector Emitter Breakdown Voltage :
400V
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 4A 5V
Length :
10.29mm
Collector Emitter Saturation Voltage :
2V
Published :
2008
Operating Temperature :
-65°C~150°C TJ
Terminal Finish :
Tin (Sn)
Continuous Collector Current :
8A
Pbfree Code :
yes
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
400V
Mounting Type :
Surface Mount
Number of Elements :
1
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Transistor Element Material :
SILICON
Vce Saturation (Max) @ Ib, Ic :
3V @ 400mA, 8A
Power - Max :
100W
Surface Mount :
yes
Number of Terminations :
2
Max Breakdown Voltage :
400V
Number of Pins :
3
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Datasheets
MJB5742T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJB5742T4G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJB5742, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, MJB5742T4G pinout, MJB5742T4G datasheet PDF, MJB5742T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJB5742T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJB5742T4G


NPN - Darlington -65°C~150°C TJ 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

MJB5742T4G Overview


In this device, the DC current gain is 200 @ 4A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 400mA, 8A.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 8V allows for a high level of efficiency.An input voltage of 400V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

MJB5742T4G Features


the DC current gain for this device is 200 @ 4A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 400mA, 8A
the emitter base voltage is kept at 8V


MJB5742T4G Applications


There are a lot of ON Semiconductor
MJB5742T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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