MIEB101H1200EH

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Series :

--

Gate-Emitter Voltage-Max :

20V

Power Dissipation-Max (Abs) :

630 W

JESD-30 Code :

R-PUFM-X14

Transistor Element Material :

SILICON

Mounting Style :

Chassis Mount

Collector Current-Max (IC) :

183 A

Lead Free :

Lead Free

Voltage - Collector Emitter Breakdown (Max) :

1200V

Reach Compliance Code :

Compliant

IGBT Type :

--

Additional Feature :

UL RECOGNIZED

Current - Collector Cutoff (Max) :

300μA

Max Power Dissipation :

630W

NTC Thermistor :

No

Mount :

Chassis Mount

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 100A

Configuration :

Full Bridge Inverter

Operating Temperature :

-40°C~125°C TJ

Product Type :

IGBT Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

4

Current - Collector (Ic) (Max) :

183A

Case Connection :

Isolated

Max Collector Current :

183A

RoHS :

Details

Surface Mount :

No

Transistor Application :

POWER CONTROL

Product Category :

IGBT Modules

Collector Emitter Breakdown Voltage :

1.2kV

Brand :

IXYS

Collector Emitter Voltage (VCEO) :

2.2V

RoHS Status :

ROHS3 Compliant

Minimum Operating Temperature :

- 40 C

Turn On Time :

175 ns

Package Shape :

RECTANGULAR

Terminal Position :

UPPER

VCEsat-Max :

2.2 V

Input :

Standard

Collector-Emitter Voltage-Max :

1200 V

Supplier Device Package :

e3

Turn Off Time-Nom (toff) :

700 ns

Product Status :

Active

Mounting Type :

Chassis Mount

Packaging :

Bulk

Number of Terminals :

14

Power - Max :

630W

Input Capacitance (Cies) @ Vce :

7.43nF @ 25V

Input Capacitance :

7.43nF

Package :

Box

Polarity/Channel Type :

N-Channel

Base Product Number :

MIEB101

Terminal Form :

UNSPECIFIED

Number of Terminations :

14

Package / Case :

e3

Product :

IGBT Silicon Modules

Manufacturer :

IXYS

Maximum Operating Temperature :

+ 125 C