MIEB100W1200TEH

Manufacturer :

Littelfuse

Product Category :

Transistors - IGBTs - Modules

Reach Compliance Code :

Compliant

Terminal Position :

UPPER

Series :

--

NTC Thermistor :

yes

Current - Collector Cutoff (Max) :

300μA

Published :

2010

Package :

Box

Current - Collector (Ic) (Max) :

183A

Power Dissipation-Max (Abs) :

630 W

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

2.2V

Mounting Type :

Chassis Mount

Number of Terminations :

35

Operating Temperature :

-40°C~125°C TJ

Number of Terminals :

35

Supplier Device Package :

e3

Transistor Application :

POWER CONTROL

Case Connection :

Isolated

Product Status :

Active

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X35

Mounting Style :

Chassis Mount

Package / Case :

e3

Gate-Emitter Voltage-Max :

20V

Collector Emitter Breakdown Voltage :

1.2kV

Package Shape :

RECTANGULAR

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 100A

Configuration :

Three Phase Inverter

Collector-Emitter Voltage-Max :

1200 V

Mount :

Chassis Mount

Minimum Operating Temperature :

- 40 C

Additional Feature :

UL RECOGNIZED

Voltage - Collector Emitter Breakdown (Max) :

1200V

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 125 C

Number of Elements :

6

Input Capacitance (Cies) @ Vce :

7.43nF @ 25V

Input :

Standard

VCEsat-Max :

2.2 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Turn Off Time-Nom (toff) :

700 ns

Power - Max :

630W

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Max Collector Current :

183A

Base Product Number :

MIEB100

Collector Current-Max (IC) :

183 A

Max Power Dissipation :

630W

IGBT Type :

--

Turn On Time :

175 ns

Manufacturer :

IXYS Corporation

Input Capacitance :

7.43nF