MGSF2N02ELT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1.25W Ta

Gate Charge (Qg) (Max) @ Vgs :

3.5nC @ 4V

Lead Free :

Lead Free

Radiation Hardening :

No

ECCN Code :

EAR99

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 5V

Factory Lead Time :

10 Weeks

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Resistance :

85mOhm

Transistor Element Material :

SILICON

Terminal Position :

Dual

Lifecycle Status :

ACTIVE (Last Updated: 8 hours ago)

FET Type :

N-Channel

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

5A

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.8A Ta

Height :

1.01mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

85m Ω @ 3.6A, 4.5V

Packaging :

Cut Tape (CT)

Vgs (Max) :

±8V

Nominal Vgs :

500 mV

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

1V

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

8V

Published :

2001

Turn-Off Delay Time :

28 ns

Length :

3.04mm

Voltage - Rated DC :

20V

Terminal Form :

Gull wing

Power Dissipation :

1.25W

Continuous Drain Current (ID) :

2.8A

Mounting Type :

Surface Mount

Rise Time :

95ns

Surface Mount :

yes

Current Rating :

2.8A

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Pin Count :

3

Fall Time (Typ) :

95 ns

Transistor Application :

SWITCHING

Turn On Delay Time :

6 ns

Width :

1.4mm

Number of Terminations :

3

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE