MGSF1N03LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.4V @ 250μA

Lead Free :

Lead Free

ECCN Code :

EAR99

Current Rating :

750mA

Power Dissipation :

730mW

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Number of Terminations :

3

Turn-Off Delay Time :

16 ns

Rise Time :

1ns

Element Configuration :

Single

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Width :

1.397mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.7V

Power Dissipation-Max :

420mW Ta

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Length :

3.0226mm

Fall Time (Typ) :

1 ns

Pin Count :

3

Turn On Delay Time :

2.5 ns

Surface Mount :

yes

Number of Pins :

3

Factory Lead Time :

24 Weeks

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Nominal Vgs :

1.7 V

Continuous Drain Current (ID) :

2.1A

Terminal Position :

Dual

Voltage - Rated DC :

30V

Pbfree Code :

yes

Height :

1.016mm

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 5V

Current - Continuous Drain (Id) @ 25°C :

1.6A Ta

Published :

1998

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.2A, 10V

Number of Elements :

1

Terminal Form :

Gull wing

Resistance :

80mOhm