MCH6421-TL-E
- Mfr.Part #
- MCH6421-TL-E
- Manufacturer
- onsemi
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 5.5A 6MCPH
- Stock
- 94,359
- In Stock :
- 94,359
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 32 ns
- Power Dissipation :
- 1.5W
- JESD-609 Code :
- e6
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 1.5W Ta
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Rise Time :
- 26ns
- Mounting Type :
- Surface Mount
- Published :
- 2012
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 6-SMD, Flat Leads
- Height :
- 850μm
- FET Type :
- N-Channel
- Vgs (Max) :
- ±12V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Drain to Source Breakdown Voltage :
- 20V
- Rds On (Max) @ Id, Vgs :
- 38m Ω @ 2A, 4.5V
- Length :
- 2mm
- Turn-Off Delay Time :
- 38 ns
- Turn On Delay Time :
- 7.5 ns
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Pin Count :
- 6
- Continuous Drain Current (ID) :
- 5.5A
- Gate Charge (Qg) (Max) @ Vgs :
- 5.1nC @ 4.5V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 410pF @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Ta
- Width :
- 1.6mm
- Gate to Source Voltage (Vgs) :
- 12V
- Vgs(th) (Max) @ Id :
- 1.3V @ 1mA
- Radiation Hardening :
- No
- Datasheets
- MCH6421-TL-E
MCH6421-TL-E Documents

N-Channel Tape & Reel (TR) 38m Ω @ 2A, 4.5V ±12V 410pF @ 10V 5.1nC @ 4.5V 6-SMD, Flat Leads
MCH6421-TL-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 410pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.5A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.It is [38 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 7.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).
MCH6421-TL-E Features
a continuous drain current (ID) of 5.5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 38 ns
MCH6421-TL-E Applications
There are a lot of ON Semiconductor
MCH6421-TL-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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