MCH6321-TL-E
- Mfr.Part #
- MCH6321-TL-E
- Manufacturer
- onsemi
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4A 6MCPH
- Stock
- 5,121
- In Stock :
- 5,121
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 39 ns
- ECCN Code :
- EAR99
- Number of Terminations :
- 6
- Height :
- 850μm
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 375pF @ 10V
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 10V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Published :
- 2007
- Rise Time :
- 31ns
- Width :
- 1.6mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e6
- Continuous Drain Current (ID) :
- 4A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 hour ago)
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 1.5W
- Number of Elements :
- 1
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Turn-Off Delay Time :
- 40 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 4.6nC @ 4.5V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 1.5W
- Pin Count :
- 6
- Package / Case :
- 6-SMD, Flat Leads
- Turn On Delay Time :
- 8.1 ns
- Drain Current-Max (Abs) (ID) :
- 4A
- Drain to Source Breakdown Voltage :
- -20V
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 83m Ω @ 2A, 4.5V
- Drain-source On Resistance-Max :
- 0.083Ohm
- Length :
- 2mm
- Number of Pins :
- 6
- Datasheets
- MCH6321-TL-E

P-Channel Tape & Reel (TR) 83m Ω @ 2A, 4.5V 375pF @ 10V 4.6nC @ 4.5V 20V 6-SMD, Flat Leads
MCH6321-TL-E Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 375pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4A amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [4A] according to its drain current.It is [40 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8.1 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).
MCH6321-TL-E Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 40 ns
a 20V drain to source voltage (Vdss)
MCH6321-TL-E Applications
There are a lot of ON Semiconductor
MCH6321-TL-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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