MCH6320-TL-E
- Mfr.Part #
- MCH6320-TL-E
- Manufacturer
- onsemi
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- MOSFET P-CH 12V 3.5A 6MCPH
- Stock
- 20,410
- In Stock :
- 20,410
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 1.5W
- Drain to Source Breakdown Voltage :
- 12V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 10V
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 1.5A, 4.5V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±10V
- Turn-Off Delay Time :
- 41 ns
- Factory Lead Time :
- 4 Weeks
- Number of Pins :
- 6
- Pin Count :
- 6
- Width :
- 1.6mm
- Turn On Delay Time :
- 8.8 ns
- Package / Case :
- 6-SMD, Flat Leads
- Element Configuration :
- Single
- Length :
- 2mm
- Lifecycle Status :
- LIFETIME (Last Updated: 1 day ago)
- Fall Time (Typ) :
- 50 ns
- Continuous Drain Current (ID) :
- 3.5A
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Ta
- JESD-609 Code :
- e6
- Vgs(th) (Max) @ Id :
- 1.4V @ 1mA
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 1.5W Ta
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Pbfree Code :
- yes
- Rise Time :
- 80ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Published :
- 2012
- Lead Free :
- Lead Free
- Height :
- 850μm
- Gate Charge (Qg) (Max) @ Vgs :
- 5.6nC @ 4.5V
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 6V
- Datasheets
- MCH6320-TL-E

P-Channel Tape & Reel (TR) 70m Ω @ 1.5A, 4.5V ±10V 405pF @ 6V 5.6nC @ 4.5V 6-SMD, Flat Leads
MCH6320-TL-E Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 405pF @ 6V.This device conducts a continuous drain current (ID) of 3.5A, which is the maximum continuous current transistor can conduct.Using VGS=12V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 12V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 41 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
MCH6320-TL-E Features
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 12V voltage
the turn-off delay time is 41 ns
MCH6320-TL-E Applications
There are a lot of ON Semiconductor
MCH6320-TL-E applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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