MC1413BDR2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Base Part Number :

MC1413B

Collector Emitter Saturation Voltage :

1.6V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.1V

Terminal Position :

Dual

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Terminal Form :

Gull wing

Polarity :

NPN

Package / Case :

16-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount, Through Hole

Current Rating :

500mA

Height :

3.9878mm

Output Current :

500mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 350mA 2V

Number of Terminations :

16

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 500μA, 350mA

Pin Count :

16

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

9.9822mm

Radiation Hardening :

No

Output Voltage :

50V

hFE Min :

1000

Configuration :

COMPLEX

REACH SVHC :

No SVHC

Published :

2006

Pbfree Code :

yes

Number of Elements :

7

Factory Lead Time :

15 Weeks

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

50V

Collector Emitter Voltage (VCEO) :

50V

Operating Temperature :

150°C TJ

Halogen Free :

Halogen Free

Width :

1.4986mm

Max Collector Current :

500mA

Number of Pins :

16

ECCN Code :

EAR99

Additional Feature :

LOGIC LEVEL COMPATIBLE

Transistor Type :

7 NPN Darlington

RoHS Status :

ROHS3 Compliant