MBT6429DW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

200mA

ECCN Code :

EAR99

Published :

2005

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Terminal Form :

Gull wing

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

500 @ 100μA 5V

Collector Emitter Voltage (VCEO) :

45V

Max Power Dissipation :

150mW

Frequency :

700MHz

Collector Emitter Breakdown Voltage :

45V

Power Dissipation :

150mW

Collector Base Voltage (VCBO) :

55V

Gain Bandwidth Product :

700MHz

Pin Count :

6

Voltage - Rated DC :

40V

Element Configuration :

Dual

Width :

1.35mm

Length :

2.2mm

Base Part Number :

MBT6429D

Transistor Application :

AMPLIFIER

Surface Mount :

yes

Number of Elements :

2

Number of Pins :

6

Lead Free :

Lead Free

Max Collector Current :

200mA

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

NPN

Max Breakdown Voltage :

45V

Peak Reflow Temperature (Cel) :

260

Package / Case :

6-TSSOP, SC-88, SOT-363

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Current - Collector Cutoff (Max) :

100nA

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Saturation Voltage :

600mV

Height :

1mm

Transistor Type :

2 NPN (Dual)

Emitter Base Voltage (VEBO) :

6V

JESD-609 Code :

e3

hFE Min :

500

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)