MBRT20060R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Diode Configuration :

1 Pair Common Anode

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Diode Element Material :

SILICON

Mounting Type :

Chassis Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Min Operating Temperature :

-40°C

Max Reverse Leakage Current :

1μA

Max Reverse Voltage (DC) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

UPPER

Max Surge Current :

1.5kA

Pitch :

2.54mm

RoHS Status :

RoHS Compliant

Average Rectified Current :

200A

Current - Average Rectified (Io) :

200A DC

Application :

Power

REACH SVHC :

No SVHC

Forward Current :

200A

Terminal Form :

UNSPECIFIED

Max Voltage Rating (AC) :

150V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Factory Lead Time :

6 Weeks

Voltage - Forward (Vf) (Max) @ If :

800mV @ 100A

Forward Voltage :

800mV

Number of Terminations :

3

ECCN Code :

EAR99

Number of Phases :

1

Case Connection :

Isolated

Diode Type :

Schottky

Element Configuration :

Common Anode

Orientation :

Straight

HTS Code :

8541.10.00.80

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Operating Temperature :

150°C

Max Repetitive Reverse Voltage (Vrrm) :

60V

Mount :

Chassis Mount, Through Hole

Peak Reverse Current :

1A

Packaging :

Bulk

Output Current-Max :

100A

Package / Case :

Three Tower

Number of Pins :

3

Number of Contacts :

6

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

Number of Elements :

2