MBRT12035R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Position :

UPPER

Mount :

Chassis Mount, Through Hole

Max Voltage Rating (DC) :

600.6kV

Number of Terminations :

3

Max Reverse Leakage Current :

1μA

Peak Reverse Current :

1A

ECCN Code :

EAR99

Diode Element Material :

SILICON

Terminal Form :

UNSPECIFIED

Max Repetitive Reverse Voltage (Vrrm) :

35V

Number of Phases :

1

Current - Average Rectified (Io) :

120A DC

RoHS Status :

RoHS Compliant

Operating Temperature - Junction :

-55°C~150°C

Output Current-Max :

60A

Mounting Type :

Chassis Mount

Packaging :

Bulk

Termination :

Solder

Voltage - Forward (Vf) (Max) @ If :

750mV @ 60A

Factory Lead Time :

6 Weeks

HTS Code :

8541.10.00.80

Diode Type :

Schottky

Orientation :

Straight

Application :

Power

Number of Elements :

2

Max Operating Temperature :

150°C

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pitch :

4.2mm

JESD-30 Code :

R-PUFM-X3

Package / Case :

Three Tower

Case Connection :

Isolated

Lifecycle Status :

Production (Last Updated: 4 months ago)

Max Reverse Voltage (DC) :

35V

Forward Current :

120A

Current - Reverse Leakage @ Vr :

1mA @ 20V

Diode Configuration :

1 Pair Common Anode

Max Surge Current :

800A

Min Operating Temperature :

-40°C

Average Rectified Current :

120A

Number of Contacts :

12

Speed :

Fast Recovery =< 500ns, > 200mA (Io)