MBRT12035R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Form :

UNSPECIFIED

Package / Case :

Three Tower

Max Operating Temperature :

150°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Packaging :

Bulk

Max Reverse Voltage (DC) :

35V

Diode Configuration :

1 Pair Common Anode

RoHS Status :

RoHS Compliant

Orientation :

Straight

Number of Contacts :

12

Operating Temperature - Junction :

-55°C~150°C

Max Repetitive Reverse Voltage (Vrrm) :

35V

Max Surge Current :

800A

ECCN Code :

EAR99

Current - Reverse Leakage @ Vr :

1mA @ 20V

Pitch :

4.2mm

Peak Reverse Current :

1A

Diode Type :

Schottky

Terminal Position :

UPPER

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

Production (Last Updated: 4 months ago)

Min Operating Temperature :

-40°C

Number of Elements :

2

Diode Element Material :

SILICON

Max Voltage Rating (DC) :

600.6kV

HTS Code :

8541.10.00.80

Voltage - Forward (Vf) (Max) @ If :

750mV @ 60A

Mounting Type :

Chassis Mount

Number of Terminations :

3

Application :

Power

Mount :

Chassis Mount, Through Hole

Average Rectified Current :

120A

Factory Lead Time :

6 Weeks

Output Current-Max :

60A

Forward Current :

120A

Max Reverse Leakage Current :

1μA

Case Connection :

Isolated

Current - Average Rectified (Io) :

120A DC

Pbfree Code :

yes

Termination :

Solder

JESD-30 Code :

R-PUFM-X3