MBRT12035R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Package / Case :

Three Tower

Application :

Power

Operating Temperature - Junction :

-55°C~150°C

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Factory Lead Time :

6 Weeks

Current - Average Rectified (Io) :

120A DC

Number of Terminations :

3

Forward Current :

120A

Max Reverse Leakage Current :

1μA

Orientation :

Straight

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Surge Current :

800A

Voltage - Forward (Vf) (Max) @ If :

750mV @ 60A

Max Voltage Rating (DC) :

600.6kV

Peak Reverse Current :

1A

Mounting Type :

Chassis Mount

Diode Configuration :

1 Pair Common Anode

HTS Code :

8541.10.00.80

Max Operating Temperature :

150°C

Case Connection :

Isolated

Max Repetitive Reverse Voltage (Vrrm) :

35V

Mount :

Chassis Mount, Through Hole

Terminal Form :

UNSPECIFIED

Pitch :

4.2mm

Number of Elements :

2

Termination :

Solder

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Average Rectified Current :

120A

Number of Phases :

1

Output Current-Max :

60A

ECCN Code :

EAR99

Number of Contacts :

12

Diode Element Material :

SILICON

Diode Type :

Schottky

Max Reverse Voltage (DC) :

35V

Packaging :

Bulk

JESD-30 Code :

R-PUFM-X3

Min Operating Temperature :

-40°C

Pbfree Code :

yes

Lifecycle Status :

Production (Last Updated: 4 months ago)

Current - Reverse Leakage @ Vr :

1mA @ 20V