MBRT20030R

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Position :

UPPER

Mount :

Chassis Mount

Diode Element Material :

SILICON

Published :

2010

Max Surge Current :

1.5kA

Case Connection :

Isolated

ECCN Code :

EAR99

Max Operating Temperature :

150°C

Peak Reverse Current :

1A

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

750mV @ 100A

Max Repetitive Reverse Voltage (Vrrm) :

30V

Factory Lead Time :

6 Weeks

Diode Type :

Schottky

Min Operating Temperature :

-40°C

Packaging :

Bulk

Forward Current :

200A

Average Rectified Current :

200A

Terminal Form :

UNSPECIFIED

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Reverse Leakage Current :

1μA

HTS Code :

8541.10.00.80

Package / Case :

Three Tower

Number of Elements :

2

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Application :

Power

Lifecycle Status :

Production (Last Updated: 5 months ago)

Current - Average Rectified (Io) :

200A DC

Number of Phases :

1

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Anode

Output Current-Max :

100A

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X3

Max Reverse Voltage (DC) :

30V