MBRT200100

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Current - Reverse Leakage @ Vr :

1mA @ 20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Peak Reverse Current :

1A

Mounting Type :

Chassis Mount

Diode Configuration :

1 Pair Common Cathode

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

Production (Last Updated: 4 months ago)

Factory Lead Time :

6 Weeks

Number of Terminations :

3

Forward Current :

200A

Voltage - Forward (Vf) (Max) @ If :

880mV @ 100A

JESD-30 Code :

R-PUFM-X3

Element Configuration :

Common Cathode

Package / Case :

Three Tower

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Operating Temperature :

150°C

Application :

Power

Max Reverse Leakage Current :

1μA

Mount :

Chassis Mount

Average Rectified Current :

200A

Number of Elements :

2

Max Repetitive Reverse Voltage (Vrrm) :

100V

Output Current-Max :

100A

Min Operating Temperature :

-40°C

Pbfree Code :

yes

Operating Temperature - Junction :

-55°C~150°C

Packaging :

Bulk

Max Surge Current :

1.5kA

Max Reverse Voltage (DC) :

100V

Terminal Position :

UPPER

Published :

2010

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Element Material :

SILICON

Current - Average Rectified (Io) :

200A DC

Diode Type :

Schottky