MBR60H100CT

Manufacturer :

onsemi

Product Category :

Diodes - Rectifiers - Arrays

Peak Reverse Current :

10mA

Diode Configuration :

1 Pair Common Cathode

HTS Code :

8541.10.00.80

Number of Pins :

3

ECCN Code :

EAR99

Additional Feature :

LOW POWER LOSS

Operating Temperature - Junction :

175°C Max

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Element Configuration :

Common Cathode

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Series :

SWITCHMODE™

Max Operating Temperature :

175°C

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Forward Voltage :

980mV

Width :

4.82mm

Max Repetitive Reverse Voltage (Vrrm) :

100V

Number of Phases :

1

Number of Elements :

2

Max Reverse Voltage (DC) :

100V

Max Surge Current :

350A

Length :

10.28mm

Package / Case :

TO-220-3

Diode Element Material :

SILICON

Voltage - Forward (Vf) (Max) @ If :

840mV @ 30A

Diode Type :

Schottky

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Surface Mount :

No

Contact Plating :

Tin

Max Reverse Leakage Current :

100μA

Pin Count :

3

Packaging :

Tube

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Peak Non-Repetitive Surge Current :

350A

Current - Reverse Leakage @ Vr :

10μA @ 100V

Forward Current :

60A

Weight :

4.535924g

Terminal Position :

Single

Current Rating :

60A

JEDEC-95 Code :

TO-220AB

Height :

15.75mm

Max Forward Surge Current (Ifsm) :

350A

Radiation Hardening :

No

Voltage - Rated DC :

100V

Published :

2004

Min Operating Temperature :

-65°C

Number of Terminations :

3

Average Rectified Current :

30A

Application :

EFFICIENCY