MBR600100CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Peak Reverse Current :

1A

ECCN Code :

EAR99

Packaging :

Bulk

Max Repetitive Reverse Voltage (Vrrm) :

100V

Min Operating Temperature :

-40°C

Terminal Form :

UNSPECIFIED

Diode Configuration :

1 Pair Common Cathode

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Application :

Power

Current - Reverse Leakage @ Vr :

1mA @ 20V

Number of Elements :

2

Output Current-Max :

300A

RoHS Status :

RoHS Compliant

Published :

2013

Max Reverse Voltage (DC) :

100V

Max Operating Temperature :

150°C

Diode Type :

Schottky

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

Twin Tower

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Terminal Position :

UPPER

Number of Phases :

1

Mount :

Chassis Mount

Voltage - Forward (Vf) (Max) @ If :

880mV @ 300A

JESD-30 Code :

R-PUFM-X2

Pbfree Code :

yes

Number of Terminations :

2

Current - Average Rectified (Io) :

300A

Factory Lead Time :

6 Weeks

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Surge Current :

4kA

Average Rectified Current :

600A

Forward Current :

600A

Mounting Type :

Chassis Mount

Max Reverse Leakage Current :

1μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80