MBR60035CTL

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Position :

UPPER

Average Rectified Current :

300A

Reverse Current-Max :

3000μA

Number of Terminations :

2

Max Reverse Voltage (DC) :

35V

Number of Elements :

2

Diode Configuration :

1 Pair Common Cathode

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Bulk

Diode Element Material :

SILICON

JESD-30 Code :

R-PUFM-X2

Operating Temperature (Max) :

150°C

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Forward (Vf) (Max) @ If :

600mV @ 300A

HTS Code :

8541.10.00.80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Reverse Leakage @ Vr :

3mA @ 35V

RoHS Status :

RoHS Compliant

Mount :

Chassis Mount

Diode Type :

Schottky

Operating Temperature - Junction :

-55°C~150°C

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Non-rep Pk Forward Current-Max :

4000A

Element Configuration :

Common Cathode

Number of Phases :

1

Application :

Power

Package / Case :

Twin Tower