MBR6035PT

Manufacturer :

Taiwan Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

HTS Code :

8541.10.00.80

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Phases :

1

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type :

Through Hole

Max Reverse Voltage (DC) :

35V

Peak Non-Repetitive Surge Current :

500A

Voltage - Forward (Vf) (Max) @ If :

750mV @ 60A

Forward Current :

60A

Peak Reverse Current :

1mA

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

150°C

Factory Lead Time :

16 Weeks

Element Configuration :

Common Cathode

Length :

16.25mm

Diode Element Material :

SILICON

Pbfree Code :

No

Current - Reverse Leakage @ Vr :

1mA @ 35V

Terminal Position :

Single

Diode Type :

Schottky

Package / Case :

TO-3P-3, SC-65-3

Operating Temperature - Junction :

-55°C~150°C

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Diode Configuration :

1 Pair Common Cathode

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tube

Min Operating Temperature :

-55°C

Mount :

Through Hole

Published :

2005

Additional Feature :

LOW POWER LOSS, FREE WHEELING DIODE

Radiation Hardening :

No

Height :

22.38mm

Number of Terminations :

3

Application :

EFFICIENCY

Max Repetitive Reverse Voltage (Vrrm) :

35V

JESD-609 Code :

e3

Width :

5.36mm

Average Rectified Current :

60A

Weight :

6.756003g

Forward Voltage :

750mV

Terminal Finish :

Matte Tin (Sn)

Max Forward Surge Current (Ifsm) :

500A

Number of Pins :

3

ECCN Code :

EAR99