MBR60045CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Average Rectified Current :

600A

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Current - Reverse Leakage @ Vr :

1mA @ 20V

Pbfree Code :

yes

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Package / Case :

Twin Tower

Application :

Power

Packaging :

Bulk

Mounting Type :

Chassis Mount

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Current - Average Rectified (Io) :

300A

Number of Elements :

2

Peak Reverse Current :

1A

Min Operating Temperature :

-40°C

Forward Current :

600A

Terminal Form :

UNSPECIFIED

Max Operating Temperature :

150°C

Output Current-Max :

300A

Mount :

Chassis Mount

Diode Type :

Schottky

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Max Reverse Voltage (DC) :

45V

Published :

2013

JESD-30 Code :

R-PUFM-X2

Diode Element Material :

SILICON

HTS Code :

8541.10.00.80

Number of Phases :

1

Max Repetitive Reverse Voltage (Vrrm) :

45V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Configuration :

1 Pair Common Cathode

Terminal Position :

UPPER

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Number of Terminations :

2

Max Surge Current :

4kA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)