MBR60040CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Terminal Form :

UNSPECIFIED

Application :

Power

Current - Reverse Leakage @ Vr :

1mA @ 20V

Mount :

Chassis Mount

Max Repetitive Reverse Voltage (Vrrm) :

40V

Diode Type :

Schottky

Diode Element Material :

SILICON

Package / Case :

Twin Tower

Terminal Position :

UPPER

Published :

2012

Number of Terminations :

2

Operating Temperature - Junction :

-55°C~150°C

Element Configuration :

Common Anode

Current - Average Rectified (Io) :

300A

ECCN Code :

EAR99

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

RoHS Status :

RoHS Compliant

Number of Phases :

1

Average Rectified Current :

600A

Min Operating Temperature :

-40°C

JESD-30 Code :

R-PUFM-X2

HTS Code :

8541.10.00.80

Forward Current :

600A

Max Reverse Leakage Current :

1μA

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Output Current-Max :

300A

Factory Lead Time :

6 Weeks

Max Surge Current :

4kA

Mounting Type :

Chassis Mount

Diode Configuration :

1 Pair Common Anode

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Number of Elements :

2

Packaging :

Bulk

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Max Operating Temperature :

150°C

Max Reverse Voltage (DC) :

40V

Peak Reverse Current :

1A