MBR60040CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

Diode Element Material :

SILICON

Voltage - Forward (Vf) (Max) @ If :

750mV @ 300A

Element Configuration :

Common Cathode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Packaging :

Bulk

RoHS Status :

RoHS Compliant

Current - Reverse Leakage @ Vr :

1mA @ 20V

Operating Temperature - Junction :

-55°C~150°C

Mounting Type :

Chassis Mount

Number of Phases :

1

Application :

Power

Mount :

Chassis Mount

Published :

2012

Package / Case :

Twin Tower

Number of Terminations :

2

Diode Type :

Schottky

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Operating Temperature :

150°C

Terminal Form :

UNSPECIFIED

Min Operating Temperature :

-40°C

Forward Current :

600A

Max Repetitive Reverse Voltage (Vrrm) :

40V

Number of Elements :

2

Diode Configuration :

1 Pair Common Cathode

Terminal Position :

UPPER

JESD-30 Code :

R-PUFM-X2

Max Reverse Voltage (DC) :

40V

Current - Average Rectified (Io) :

300A

Average Rectified Current :

600A

Max Surge Current :

4kA

ECCN Code :

EAR99

HTS Code :

8541.10.00.80

Output Current-Max :

300A

Peak Reverse Current :

1A

Pbfree Code :

yes