MBR50080CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Average Rectified (Io) :

500A DC

Element Configuration :

Common Anode

JESD-30 Code :

R-PUFM-X2

Number of Phases :

1

Package / Case :

Twin Tower

Diode Configuration :

1 Pair Common Anode

Application :

Power

Terminal Form :

UNSPECIFIED

Pbfree Code :

yes

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Max Surge Current :

3.5kA

Factory Lead Time :

6 Weeks

Max Reverse Voltage (DC) :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Reverse Leakage @ Vr :

1mA @ 20V

RoHS Status :

RoHS Compliant

Average Rectified Current :

500A

Peak Reverse Current :

1A

Forward Current :

500A

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Min Operating Temperature :

-40°C

Voltage - Forward (Vf) (Max) @ If :

880mV @ 250A

Published :

2013

Diode Type :

Schottky, Reverse Polarity

Number of Elements :

2

Output Current-Max :

250A

Number of Terminations :

2

ECCN Code :

EAR99

Mount :

Chassis Mount

Diode Element Material :

SILICON

Max Reverse Leakage Current :

1μA

HTS Code :

8541.10.00.80

Max Repetitive Reverse Voltage (Vrrm) :

80V

Packaging :

Bulk

Max Operating Temperature :

150°C