MBR50035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Voltage Rating (DC) :

600.6kV

Max Operating Temperature :

150°C

Min Operating Temperature :

-40°C

Voltage - Forward (Vf) (Max) @ If :

750mV @ 250A

Orientation :

Straight

Max Reverse Voltage (DC) :

35V

Max Reverse Leakage Current :

1μA

Number of Terminations :

2

Termination :

Solder

HTS Code :

8541.10.00.80

Pbfree Code :

yes

Diode Configuration :

1 Pair Common Anode

Forward Current :

500A

Packaging :

Bulk

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Average Rectified Current :

500A

Pitch :

4.2mm

Package / Case :

Twin Tower

Mount :

Chassis Mount, Through Hole

Output Current-Max :

250A

Peak Reverse Current :

1A

Current - Average Rectified (Io) :

500A DC

Number of Phases :

1

Diode Type :

Schottky

Operating Temperature - Junction :

-55°C~150°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

JESD-30 Code :

R-PUFM-X2

ECCN Code :

EAR99

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Surge Current :

3.5kA

Application :

Power

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Diode Element Material :

SILICON

Number of Contacts :

24

Factory Lead Time :

6 Weeks

Number of Elements :

2

Current - Reverse Leakage @ Vr :

1mA @ 20V

Max Repetitive Reverse Voltage (Vrrm) :

35V