MBR50035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Reverse Leakage Current :

1μA

HTS Code :

8541.10.00.80

Terminal Form :

UNSPECIFIED

Operating Temperature - Junction :

-55°C~150°C

Max Repetitive Reverse Voltage (Vrrm) :

35V

Number of Phases :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Chassis Mount

Average Rectified Current :

500A

Max Reverse Voltage (DC) :

35V

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Current - Average Rectified (Io) :

500A DC

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

JESD-30 Code :

R-PUFM-X2

Voltage - Forward (Vf) (Max) @ If :

750mV @ 250A

Min Operating Temperature :

-40°C

ECCN Code :

EAR99

Diode Type :

Schottky

Application :

Power

Number of Terminations :

2

Diode Element Material :

SILICON

Factory Lead Time :

4 Weeks

Output Current-Max :

250A

Number of Elements :

2

Peak Reverse Current :

1A

Packaging :

Bulk

Diode Configuration :

1 Pair Common Cathode

Max Surge Current :

3.5kA

Package / Case :

Twin Tower

Forward Current :

500A

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Current - Reverse Leakage @ Vr :

1mA @ 20V