LBN150B01-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Published :

2008

RoHS Status :

ROHS3 Compliant

Height :

1.1mm

Mount :

Surface Mount

Turn Off Time-Max (toff) :

300ns

Lead Free :

Lead Free

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Max Breakdown Voltage :

40V

hFE Min :

105

Emitter Base Voltage (VEBO) :

6V

Terminal Finish :

Matte Tin (Sn)

Length :

3mm

Vce Saturation (Max) @ Ib, Ic :

360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA

Transistor Element Material :

SILICON

Transition Frequency :

250MHz

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

60V

Number of Pins :

6

Package / Case :

SOT-23-6

Base Part Number :

LBN150B01

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

40V

Pin Count :

6

Number of Elements :

2

Element Configuration :

Dual

Transistor Application :

SWITCHING

Gain Bandwidth Product :

250MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA 1V / 32 @ 100mA 1V

Packaging :

Tape and Reel (TR)

Width :

1.6mm

Current Rating :

200mA

Turn On Time-Max (ton) :

70ns

Max Collector Current :

200mA

ECCN Code :

EAR99

Transistor Type :

NPN, PNP

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

50nA

Weight :

29.993795mg

Operating Temperature :

-55°C~150°C TJ

Polarity :

NPN, PNP

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

40V