LBN150B01-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Turn On Time-Max (ton) :

70ns

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

40V

hFE Min :

105

Pbfree Code :

yes

Transistor Application :

SWITCHING

Turn Off Time-Max (toff) :

300ns

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Base Part Number :

LBN150B01

Length :

3mm

REACH SVHC :

No SVHC

Published :

2008

Width :

1.6mm

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Weight :

29.993795mg

Collector Emitter Voltage (VCEO) :

40V

Mounting Type :

Surface Mount

Gain Bandwidth Product :

250MHz

Current - Collector Cutoff (Max) :

50nA

Radiation Hardening :

No

Max Breakdown Voltage :

40V

Number of Pins :

6

Number of Elements :

2

Emitter Base Voltage (VEBO) :

6V

Transition Frequency :

250MHz

Height :

1.1mm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA 1V / 32 @ 100mA 1V

Time@Peak Reflow Temperature-Max (s) :

40

Vce Saturation (Max) @ Ib, Ic :

360mV @ 20mA, 200mA / 500mV @ 20mA, 200mA

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN, PNP

Max Collector Current :

200mA

Mount :

Surface Mount

Polarity :

NPN, PNP

Element Configuration :

Dual

Pin Count :

6

Max Power Dissipation :

300mW

Current Rating :

200mA

Collector Base Voltage (VCBO) :

60V

ECCN Code :

EAR99

Factory Lead Time :

16 Weeks