KST2907AMTF
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- Mfr.Part #
- KST2907AMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.6A SOT23-3
- Stock
- 17,947
- In Stock ：
- 17,947
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Turn On Time-Max (ton) :
- 50ns
- Published :
- 2002
- Current Rating :
- -600mA
- Number of Elements :
- 1
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Weight :
- 30mg
- Element Configuration :
- Single
- Max Collector Current :
- 600mA
- Length :
- 2.9mm
- Max Operating Temperature :
- 150°C
- JESD-609 Code :
- e3
- Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Width :
- 1.3mm
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- KST2907
- Transistor Type :
- PNP
- Factory Lead Time :
- 6 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Emitter Voltage (VCEO) :
- 60V
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.6V @ 50mA, 500mA
- Number of Terminations :
- 3
- Voltage - Rated DC :
- -60V
- Collector Base Voltage (VCBO) :
- -60V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 200MHz
- Max Power Dissipation :
- 350mW
- Height :
- 970μm
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- -1.6V
- Transition Frequency :
- 200MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 25V
- Terminal Finish :
- Tin (Sn)
- hFE Min :
- 100
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 350mW
- Datasheets
- KST2907AMTF
PNP 10nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
KST2907AMTF Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -1.6V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.6V @ 50mA, 500mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -600mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 25V volts.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
KST2907AMTF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of -1.6V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -600mA
a transition frequency of 200MHz
KST2907AMTF Applications
There are a lot of ON Semiconductor
KST2907AMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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