KSP63BU
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- Mfr.Part #
- KSP63BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92-3
- Stock
- 47,051
- In Stock ：
- 47,051
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Frequency - Transition :
- 125MHz
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TO-92-3
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- PNP - Darlington
- Power - Max :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 500mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- KSP63BU
,TO-226_straightlead.jpg)
PNP - Darlington 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
KSP63BU Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 30V maximal voltage is present.
KSP63BU Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the supplier device package of TO-92-3
KSP63BU Applications
There are a lot of ON Semiconductor
KSP63BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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