KSP05TA
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- Mfr.Part #
- KSP05TA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92-3
- Stock
- 1,880
- In Stock ：
- 1,880
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- KSP05
- Transition Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 100mA 1V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tape and Box (TB)
- hFE Min :
- 50
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 250mV
- Weight :
- 240mg
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- Collector Emitter Breakdown Voltage :
- 60V
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Voltage - Rated DC :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Terminal Position :
- BOTTOM
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 17 Weeks
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- KSP05TA
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSP05TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 50 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
KSP05TA Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
KSP05TA Applications
There are a lot of ON Semiconductor
KSP05TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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