KSH45H11TF
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- Mfr.Part #
- KSH45H11TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 80V 8A DPAK
- Stock
- 4,614
- In Stock ：
- 4,614
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 10μA
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 80V
- Max Collector Current :
- 8A
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Saturation Voltage :
- -1V
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Base Part Number :
- KSH45H11
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Weight :
- 260.37mg
- Gain Bandwidth Product :
- 40MHz
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 1.75W
- Collector Base Voltage (VCBO) :
- -80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Voltage - Rated DC :
- -80V
- Transition Frequency :
- 40MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-30 Code :
- R-PSSO-G2
- Polarity/Channel Type :
- PNP
- hFE Min :
- 60
- Current Rating :
- -8A
- Frequency :
- 40MHz
- Number of Pins :
- 3
- Power Dissipation :
- 1.75W
- Mount :
- Surface Mount
- Factory Lead Time :
- 9 Weeks
- Datasheets
- KSH45H11TF
PNP 150°C TJ 10μA 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
KSH45H11TF Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -8A current rating.As a result, the part has a transition frequency of 40MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 8A volts.
KSH45H11TF Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of -1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
a transition frequency of 40MHz
KSH45H11TF Applications
There are a lot of ON Semiconductor
KSH45H11TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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