KSE702S
- Mfr.Part #
- KSE702S
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 4A TO126-3
- Stock
- 29,115
- In Stock :
- 29,115
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 30mA, 1.5A
- Current - Collector (Ic) (Max) :
- 4A
- Power - Max :
- 40W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 1.5A 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-225AA, TO-126-3
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP - Darlington
- Datasheets
- KSE702S

PNP - Darlington 150°C TJ 100μA TO-225AA, TO-126-3 Bulk Through Hole
KSE702S Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 1.5A 3V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor shows a 80V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
KSE702S Features
the DC current gain for this device is 750 @ 1.5A 3V
the vce saturation(Max) is 2.5V @ 30mA, 1.5A
KSE702S Applications
There are a lot of ON Semiconductor
KSE702S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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