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  5. KSD261GTA
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    KSD261GTA

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    Mfr.Part #
    KSD261GTA
    Manufacturer
    onsemi
    Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Datasheet
    Download
    Description
    TRANS NPN 20V 0.5A TO92-3
    Stock
    17,392
    In Stock ：
    17,392

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    Manufacturer :
    onsemi
    Product Category :
    Transistors - Bipolar (BJT) - Single
    Base Part Number :
    KSD261
    Moisture Sensitivity Level (MSL) :
    1 (Unlimited)
    Power - Max :
    500mW
    Voltage - Collector Emitter Breakdown (Max) :
    20V
    Mounting Type :
    Through Hole
    Transistor Type :
    NPN
    Packaging :
    Tape and Box (TB)
    Operating Temperature :
    150°C TJ
    DC Current Gain (hFE) (Min) @ Ic, Vce :
    200 @ 100mA 1V
    Current - Collector (Ic) (Max) :
    500mA
    Current - Collector Cutoff (Max) :
    100nA ICBO
    Package / Case :
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    Vce Saturation (Max) @ Ib, Ic :
    400mV @ 50mA, 500mA
    Supplier Device Package :
    TO-92-3
    Datasheets
    KSD261GTA
    Introducing Transistors - Bipolar (BJT) - Single onsemi KSD261GTA from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number：KSD261, Mounting Type：Through Hole, Operating Temperature：150°C TJ, Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), KSD261GTA pinout, KSD261GTA datasheet PDF, KSD261GTA amp .Beyond Transistors - Bipolar (BJT) - Single onsemi KSD261GTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

    onsemi KSD261GTA


    NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

    KSD261GTA Overview


    This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92-3.Detection of Collector Emitter Breakdown at 20V maximal voltage is present.

    KSD261GTA Features


    the DC current gain for this device is 200 @ 100mA 1V
    the vce saturation(Max) is 400mV @ 50mA, 500mA
    the supplier device package of TO-92-3


    KSD261GTA Applications


    There are a lot of ON Semiconductor
    KSD261GTA applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting
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