KSD261CGTA
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- Mfr.Part #
- KSD261CGTA
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 20V 0.5A TO92-3
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 20V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Current Rating :
- 500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 20V
- Published :
- 2007
- Radiation Hardening :
- No
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 120
- Transistor Application :
- AMPLIFIER
- Number of Terminations :
- 3
- Base Part Number :
- KSD261
- Weight :
- 240mg
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 180mV
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 1V
- Max Power Dissipation :
- 500mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 20V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 500mW
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Datasheets
- KSD261CGTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
KSD261CGTA Overview
This device has a DC current gain of 200 @ 100mA 1V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 180mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 20V volts can be used.A maximum collector current of 500mA volts is possible.
KSD261CGTA Features
the DC current gain for this device is 200 @ 100mA 1V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
KSD261CGTA Applications
There are a lot of ON Semiconductor
KSD261CGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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